Schottky-Barrier-Induced AC Surface Photovoltages in Au-Precipitated n-Type Si(001) Surfaces

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We have studied the behavior of Au clusters on the top surface of a SiO2 film and/or at the SiO2/Si interface as a function of oxidation temperature between room temperature (RT) and 500 °C in conjunction with a Schottky-barrier-induced AC surface photovoltage (SPV) and an enhanced SiO2 growth due to Au at 500 °C. Upon rinsing an n-type Si(001) wafer in a Au-contaminated aqueous solution, precipitated Au atoms are observed as clusterlike Au granules on the top surface of SiO2 (Au surface concentration, $2.3 \times 10^{15}$ atoms/cm2). In thermally oxidized Au-contaminated n-type Si(001) wafers between 100 and 500 °C, a Au cluster of a similar shape is also observed. Chemical analysis gives evidence that Au existed at the SiO2/Si interface, which produced Au/n-Si Schottky-barrier-type AC SPV between 100 and 500 °C as well as at both RT and higher temperatures, indicating that the Au/n-Si Schottky barrier remains in a similar manner. In the Au-contaminated n-Si thermally oxidized at 500 °C, the catalytic action of Au atoms enhances SiO2 growth as well as the case at high temperatures between 750 and 900 °C. The mechanism of the enhanced growth is proposed.
2011-08-25