Phase Change Line Memory Cell Based on Ge₂Sb₂Te₅ Fabricated Using Focused Ion Beam

スポンサーリンク

概要

• 論文の詳細を見る

• Using focused-ion-beam-deposited SiO₂ as a hard mask, a new phase change line memory cell fabrication method was developed in this work. A phase change line memory cell with a length of 150 nm and width of 100 nm was fabricated and electrical characterization was performed. Reversible phase transition between amorphous (RESET) and polycrystalline (SET) states was realized. Threshold current of the device is only 0.5 μA, which is considerably low owning to the line structure. The reset operation was achieved by applying a voltage pulse with a magnitude of 3.5 V and duration of 50 ns, and the set operation was achieved by applying 1.6 V for 1000 ns. The dynamic resistance switching ratio (off/on ratio) was nearly $10^{4}$. The device fabrication method enables simplified scaling to ultrasmall phase change device dimensions.

• 2011-07-25

論文 | ランダム

• 2-II-23 Genomic and proteomic analyses of rat glioma cells overexpressing D-amino acid oxidase and stimulated with D-serine
• 2-II-22 The Effect of Risperidone on D-Amino Acid Oxidase Activity as a Hypothesis for a Novel Mechanism of Action in the Treatment of Schizophrenia
• Polarographic Determination of Traces of Phosphorus, Arsenic and Silicon Using Solvent Extraction of Molybdenumheteropoly Acids
• リサイクル技術最前線-21-フェノ-ル樹脂積層板端材の再生技術
• リサイクル技術最前線-22-ポリウレタンの新リサイクル法

もっと見る

スポンサーリンク