Phase Change Line Memory Cell Based on Ge₂Sb₂Te₅ Fabricated Using Focused Ion Beam

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概要

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• Using focused-ion-beam-deposited SiO₂ as a hard mask, a new phase change line memory cell fabrication method was developed in this work. A phase change line memory cell with a length of 150 nm and width of 100 nm was fabricated and electrical characterization was performed. Reversible phase transition between amorphous (RESET) and polycrystalline (SET) states was realized. Threshold current of the device is only 0.5 μA, which is considerably low owning to the line structure. The reset operation was achieved by applying a voltage pulse with a magnitude of 3.5 V and duration of 50 ns, and the set operation was achieved by applying 1.6 V for 1000 ns. The dynamic resistance switching ratio (off/on ratio) was nearly $10^{4}$. The device fabrication method enables simplified scaling to ultrasmall phase change device dimensions.

• 2011-07-25

論文 | ランダム

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