Enhancing Photovoltaic Characteristics of Iron Doped Amphous Carbon/Al₂O₃/Si Solar Cell by Al₂O₃ Interface Passivation

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概要

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• This letter reports the enhanced photovoltaic (PV) performance of Fe doped amorphous carbon (a-C) film/n-Si heterojunctions by depositing a thin Al₂O₃ layer at the interface of a-C:Fe and Si substrate. We demonstrate that a thin Al₂O₃ film at the interface of Fe-doped a-C/Si heterojunction allows significantly improving the devices' PV performances up to one order of magnitude under AM1.5 illumination. The enhancement of the PV effect on a-C:Fe/Al₂O₃/Si solar cells can be ascribed to the inserted Al₂O₃ layer which increases the built-in electric field barrier and realizes interface passivation by use of suppressing the charge recombination, reducing the interface states.

• 2011-07-25

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