Low-Temperature, Aqueous-Solution-Processed Zinc Tin Oxide Thin Film Transistor
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概要
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We fabricate solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs). The solution used is prepared by precipitating metal hydroxide using NaOH and dissolving it using NH<sub>4</sub>OH. The X-ray diffraction (XRD) data of the spin-coated ZTO film demonstrates an amorphous phase, and the atomic force microscopy (AFM) image shows a smooth surface. The device performance of solution-processed TFTs was analyzed as a function of annealing temperature. The fabricated TFTs were operated in the enhancement mode, and exhibited a carrier mobility of 3.03 cm2 V-1 s-1, a threshold voltage of 10.2 V, an on/off current ratio of $1.23\times 10^{7}$, a subthreshold slope of 0.78 V/decade, and high transparency (with ${\sim}90$% transmittance) at a low annealing temperature of 300 °C.
- 2011-07-25
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