Polarity Dependence of Structural and Electronic Properties of Al<sub>2</sub>O<sub>3</sub>/InN Interfaces
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概要
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We have fabricated Al<sub>2</sub>O<sub>3</sub>/InN heterostructures on yttria-stabilized zirconia (111) substrates and investigated their structural and electronic characteristics, putting special emphasis on the effects of the polarity of the InN films. We have found that In-polar InN (0001) films grow with atomically flat surfaces, which makes a striking contrast to the case of N-polar InN (000$\bar{1}$) films, where InN films show rough surfaces. High resolution X-ray photoelectron spectroscopy measurements have revealed that the Al<sub>2</sub>O<sub>3</sub>/In-polar InN interfaces are abrupt, although InO<sub>x</sub> interdiffused layers are formed at the Al<sub>2</sub>O<sub>3</sub>/N-polar InN interfaces. We have also found that the valence band offset of Al<sub>2</sub>O<sub>3</sub>/In-polar InN is 2.8 eV, while that of N-polar InN is slightly smaller, probably because the surface of In-polar InN is more resistant to the oxidizing atmosphere of the atomic layer deposition process used for Al<sub>2</sub>O<sub>3</sub> deposition.
- 2011-09-25