Simulation of Temperature Characteristics of InGaP/InGaAs/Ge Triple-Junction Solar Cell under Concentrated Light

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概要

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• Using an equivalent circuit model, the temperature characteristics of an InGaP/InGaAs/Ge triple-junction solar cell under concentrated light conditions were analyzed in detail. The current--voltage ($I$--$V$) characteristics of the single-junction solar cells (InGaP, InGaAs, and Ge solar cells) were measured at various temperatures. From the dark $I$--$V$ characteristics of each single-junction solar cell, the diode parameters and temperature exponents were extracted. The extracted diode parameters and temperature exponents were applied to the equivalent circuit model for the triple-junction solar cell, and the solar-cell performance was calculated. There was good agreement between the measured and calculated $I$--$V$ characteristics of the triple-junction solar cell at various temperatures under concentrated light conditions.

• 2011-04-25

著者

• Ota Yasuyuki

  Faculty Of Engineering Iwate University

• Nishioka Kensuke

  Faculty of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan

• Sakurada Yuya

  Faculty of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan

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