Epitaxial Lateral Overgrowth of Gallium Nitride for Embedding the Micro-Mirror Array
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概要
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We report here details of the epitaxial lateral overgrowth (ELOG) process for embedding a Ta2O5/SiO2 multilayer high reflector micro-mirror array (MMA) in the GaN. The process was aiming for purpose of applying the MMA on the micro-light emitting diode (micro-LED) for light extraction enhancement of the micro-LED. A two-step ELOG process with different temperature and pressure to achieve high lateral growth rate and low vertical growth rate was implemented and the two-step ELOG process was followed by a slow growth rate process to complete embedding the MMA.
- 2011-04-25
著者
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Chao Shiuh
Institute Of Photonics Technologies National Tsing Hua University
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Ku Hao
Institute Of Photonics Technologies National Tsing Hua University
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Huang Chen
Institute Of Environmental Chemistry Southwest Normal University
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Ku Hao
Institute of Photonics Technologies, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.
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Liao Chen
Electronics and Opto-electronics Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 31040, R.O.C.
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Chao Shiuh
Institute of Photonics Technologies, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.
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