Temperature-Compensated Nano-Ampere Current Reference Circuit with Subthreshold Metal--Oxide--Semiconductor Field-Effect Transistor Resistor Ladder
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概要
- 論文の詳細を見る
We have developed a low-power current reference circuit with little temperature dependence for micro-power LSIs in a 0.35-μm standard complementary metal--oxide--semiconductor (CMOS) process. The proposed circuit consists of a bias-voltage subcircuit, a current-source subcircuit, and an offset-voltage generation (OVG) subcircuit. The OVG subcircuit consists of a subthreshold MOS resistor ladder. It is used to generate a small offset voltage that is independent of temperature and compensates for the temperature dependence of the reference current. Experimental results demonstrated that the proposed circuit generated a 95-nA reference current and that the total power dissipation was 598 nW. The temperature coefficient of the reference current can be kept within 523 ppm/°C at temperatures from $-20$ to 100 °C.
- 2011-04-25
著者
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OSAKI Yuji
Department of Electrical and Electronic Engineering, Kobe University
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NUMA Masahiro
Department of Electrical and Electronic Engineering, Kobe University
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Hirose Tetsuya
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan
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Kuroki Nobutaka
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan
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Osaki Yuji
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan
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Numa Masahiro
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan
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