Design Considerations of Nanoscale Schottky Barrier Flash Memory with Source-Side Injection Programming

スポンサーリンク

概要

• 論文の詳細を見る

• This work numerically elucidates the considerations and optimizations of nanoscale Schottky barrier Flash cells with source-side injection programming. Due to the unique Schottky barrier junction and particular source-side injection programming, the considerations of device parameters in Schottky barriers Flash cells are dissimilar from those in traditional drain-side channel hot-electron cells. Dependences of design parameters, such as Schottky barrier height, tunnel-oxide thickness, substrate concentration, junction depth, and channel length, on the source-side injection programming are clarified to optimize nanoscale Schottky barrier Flash memory. A feasible design of 50 nm Schottky barrier cell is illustrated to have high injection efficiency at low programming voltage.

• 2011-02-25

著者

• Shih Chun-hsing

  Department Of Electrical Engineering Yuan Ze University

• Luo Yan-Xiang

  Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

• Yeh Sheng

  Department of Electronic Engineering, National Ilan University, Ilan 26047, Taiwan

関連論文

• Design Considerations of Nanoscale Schottky Barrier Flash Memory with Source-Side Injection Programming
• An Analytical Model of Short-Channel Effect for Metal–Oxide–Semiconductor Field-Effect Transistor with Insulated Shallow Extension
• Dependences of Short-Channel Effect on Doping Profiles for Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistor

スポンサーリンク