Monte Carlo Study of the Coulomb Interaction in Nanoscale Silicon Devices

概要

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Three-dimensional Monte Carlo simulations coupled self-consistently with the Poisson equation are carried out under the double-gate metal--oxide--semiconductor field-effect-transistor (MOSFET) structures with various channel lengths. The Coulomb force experienced by an electron inside the device is directly evaluated by performing the Monte Carlo simulations with or without the full Coulomb interaction and the plasmon excitation represented by dynamical potential fluctuations in the source and drain regions by the channel electrons is demonstrated. The drain current and transconductance are greatly degraded below the channel length of 20 nm if the self-consistent potential fluctuations are taken into account and, thus, the Coulomb interaction is indeed a key ingredient for reliable predictions of device properties.
2011-01-25