A New Metal–Insulator–Metal Capacitor with Nickel Fully Silicided Polycrystalline Silicon Electrodes

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概要

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• A novel low-cost metal–insulator–metal (MIM) capacitor with a high capacitance density of ${\sim}10.2$ fF/μm2 has been developed by using nickel fully silicided (Ni-FUSI) polycrystalline silicon electrodes. The low resistivities of Ni3Si, Ni2Si, and NiSi electrodes have been achieved and determined to be around 106, 39, and 21 μ$\Omega$$\cdot$cm without requiring noble metal materials. At room temperature, this MIM capacitor also displays a good leakage current density of $3.9\times 10^{-6}$ A/cm2 at 1 V and a quadratic voltage coefficient ($\alpha$) of 2266 ppm/V2. Experiments demonstrated that Schottky emission is the dominant conduction mechanism at high temperatures and low fields under top electrode injection. The Schottky barrier heights ($\varPhi_{\text{B}}$) at the Ni3Si/ZrO2, Ni2Si/ZrO2, and NiSi/ZrO2 interfaces were extracted firstly to be 1.15, 1.05, and 0.8 eV, respectively. Material characterization further reveals this structure highly appropriate for advanced MIM capacitors.

• 2010-09-25

著者

• Lin Yi-Chang

  Department of Electronic Engineering, Ching Yun University, Jhongli 32097, Taiwan

• Lee Jung-Hsiang

  Department of Electronic Engineering, Ching Yun University, Jhongli 32097, Taiwan

• Tsai Zheng-Ye

  Department of Electronic Engineering, Ching Yun University, Jhongli 32097, Taiwan

• Zhu Yi-Yun

  Department of Electronic Engineering, Ching Yun University, Jhongli 32097, Taiwan

• Chen Bo-Han

  Department of Electronic Engineering, Ching Yun University, Jhongli 32097, Taiwan

関連論文

• Electric Flame-Off Characteristics and Fracture Properties of 20μm Thin Copper Bonding Wire
• A New Metal–Insulator–Metal Capacitor with Nickel Fully Silicided Polycrystalline Silicon Electrodes
• Structural and Dielectric Characteristics of Calcium Strontium Magnesium Niobate

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