Bit-Error-Rate Evaluation of Super-Resolution Near-Field Structure Read-Only Memory Discs with Semiconductive Material InSb

概要

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Bit-error-rate (bER) evaluation using hardware (H/W) evaluation system is described for super-resolution near-field structure (super-RENS) read-only-memory (ROM) discs fabricated with a semiconductor material, In–Sb, as the super-resolution active layer. bER on the order of $10^{-5}$ below a criterion of $3.0\times 10^{-4}$ is obtained with the super-RENS ROM discs having random pattern data including a minimum pit length of 80 nm in partial response maximum likelihood of the $(1,2,2,1)$ type. The disc tilt, focus offset, and read power offset margins based on bER of readout signals are measured for the super-RENS ROM discs and are almost acceptable for practical use. Significant improvement of read stability up to 40,000 cycles realized by introducing the ZrO2 interface layer is confirmed using the H/W evaluation system.
2010-08-25