Indium Tin Oxide Electrode with an Ultrathin Al Buffer Layer for Flexible Organic Light Emitting Diode
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概要
- 論文の詳細を見る
This paper reports that the mechanical and electrical stability of indium tin oxide (ITO) film deposited on flexible plastic substrate can be much enhanced with a thin Al buffer layer while maintaining a visible transmittance over 75%. The improved stability is attributed to the effective elastic mismatch between the film and the substrate reduced by a ductile interlayer. A polymer light emitting diode fabricated using an ITO/Al anode exhibited a luminance of 13,000 cd/m2 with a current efficiency of 16 cd/A. Bending-induced degradation of the device performance was also alleviated when a mechanical buffer layer was inserted.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-06-25
著者
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Myeongkyu Lee
Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seoul 120-749, Korea
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Hongkoo Baik
Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seoul 120-749, Korea
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Sim Boyeon
Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seoul 120-749, Korea
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Hwang Hyeonseok
Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seoul 120-749, Korea
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Ryu Seungyoon
Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seoul 120-749, Korea
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Seungyoon Ryu
Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seoul 120-749, Korea
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Boyeon Sim
Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seoul 120-749, Korea