Transparent-Oxide–Semiconductor Based Top-Gate Self-Alignment Thin-Film Transistors

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概要

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• Top-gate self-aligned transparent-oxide–semiconductor transistors with indium–zinc-oxide as a semiconductor have been studied. During transistor fabrication, successive sputtering of oxide semiconductor and insulator without breaking the vacuum can be realized owing to the transparency of oxide semiconductor. The overlapping length between the gate–source and gate–drain electrodes was as small as 0.7 μm. The obtained field-effect mobility, on–off ratio, threshold voltage, mutual conductance, and subthreshold slope were 30 cm2 V-1 s-1, $10^{5}$, $-3$ V, 2 mS/mm, and 0.7 V/decade, respectively.

• 2010-04-25

著者

• Shigeki Naka

  Graduate School of Science and Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555, Japan

• Hiroyuki Okada

  Graduate School of Science and Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555, Japan

• Akira Yamagishi

  Graduate School of Science and Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555, Japan

関連論文

• Front-Light Source Using Inverted Organic Light-Emitting Diodes with Microcathode Arrays
• Transparent-Oxide–Semiconductor Based Top-Gate Self-Alignment Thin-Film Transistors
• Organic Thin-Film Transistors with Tailored Liquid Sources of HfO2 as a High-$\kappa$ Insulator

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