Characteristics of Excimer Laser-Annealed Thin-Film Transistors on the Polycrystalline Silicon Morphology Formed in the Single and Double (Overlap) Scanned Area

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In this work we investigated the material properties and electrical performance of polycrystalline silicon (poly-Si) films formed in the single and double (overlap) scanned area of excimer laser in the long axis direction at various energy densities. Poly-Si thin film transistors (TFTs) were fabricated by using the material formed by the excimer laser annealing (ELA) process. We found that the device performance of poly-Si films formed at the energy density of 200 mJ/cm2 is approximately equal to the single and double scanned area, whose overlapping irradiation does not change the characteristics of TFTs. Based on this result, a large poly-Si panel using the ELA method can be fabricated by overlapping the laser scans in the long axis direction.
2010-04-25