Low-Density InAs Quantum Dots Grown on InP(001) Using Solid-Source Molecular Beam Epitaxy with a Post-Growth Annealing Process

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概要

• 論文の詳細を見る

• Low-density InAs quantum dots (QDs) with a large lateral size were grown on InP(001) by solid-source molecular beam epitaxy with a post-growth annealing process. A decrease in QD density with the amount of InAs deposited was shown by atomic force microscopy, and a density of $5\times 10^{8}$ QDs/cm2 was obtained for 0.8 monolayer InAs deposition. Moreover, we found that the growth mechanism of QDs changed significantly depending on the amount of InAs deposited in the vicinity of critical thickness, even if the same annealing condition was applied. Near-field photoluminescence spectroscopy of single QDs demonstrated the high optical qualities of low-density QDs.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-04-25

著者

• SAIKI Toshiharu

  School of Integrated Design Engineering, Keio University

• Aziz Benamrouche

  Université de Lyon, Institut des Nanotechnologies de Lyon, UMR-CNRS 5270, Ecole Centrale de Lyon, 69134 Ecully, France

• Toshiharu Saiki

  School of Integrated Design Engineering, Keio University, Yokohama 223-8522, Japan

• Philippe Regreny

  Université de Lyon, Institut des Nanotechnologies de Lyon, UMR-CNRS 5270, Ecole Centrale de Lyon, 69134 Ecully, France

• Kubota Ryosuke

  School of Integrated Design Engineering, Keio University, Yokohama 223-8522, Japan

• Regreny Philippe

  Université de Lyon, Institut des Nanotechnologies de Lyon, UMR-CNRS 5270, Ecole Centrale de Lyon, 69134 Ecully, France

• Michel Gendry

  Université de Lyon, Institut des Nanotechnologies de Lyon, UMR-CNRS 5270, Ecole Centrale de Lyon, 69134 Ecully, France

• Ryosuke Kubota

  School of Integrated Design Engineering, Keio University, Yokohama 223-8522, Japan

• Michel Gendry

  Université de Lyon, Institut des Nanotechnologies de Lyon, UMR-CNRS 5270, Ecole Centrale de Lyon, 69134 Ecully, France

• Regreny Philippe

  Université de Lyon; Institut des Nanotechnologies de Lyon-INL, UMR CNRS 5270, CNRS, Ecole Centrale de Lyon, Ecully F-69134, France

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