Improvement of Cutoff Characteristics for In0.11Ga0.89N-Based Photocathodes Using Light-Emitting Diode Real Time Spectral Sensitivity Monitoring System
スポンサーリンク
概要
- 論文の詳細を見る
We have fabricated photomultiplier tubes (PMTs) with photocathodes consisting of In0.11Ga0.89N films. To realize sharp cutoff characteristics of the In0.11Ga0.89N-based photocathodes, a “real time” monitoring system was employed. This system utilized light sources of light-emitting diodes (LEDs), and their peak wavelengths are 285, 375, and 470 nm respectively. With this monitoring system, PMTs with InxGa1-xN-based photocathodes are realized to demonstrate sharp cutoff characteristics over three orders of magnitude with high quantum efficiencies (QEs).
- 2010-04-25
著者
-
Yoshihiro Takiguchi
Graduate School for the Creation of New Photonics Industries, Hamamatsu 431-1202, Japan
-
Shoichi Uchiyama
Graduate School for the Creation of New Photonics Industries, Hamamatsu 431-1202, Japan
-
Hiroyuki Takatsuka
Electron Tube Division, Hamamatsu Photonics K.K., Iwata, Shizuoka 438-0193, Japan
-
Uchiyama Shoichi
Graduate School for the Creation of New Photonics Industries, Hamamatsu 431-1202, Japan
-
Kondoh Haruyasu
Electron Tube Division, Hamamatsu Photonics K.K., Iwata, Shizuoka 438-0193, Japan
-
Takatsuka Hiroyuki
Electron Tube Division, Hamamatsu Photonics K.K., Iwata, Shizuoka 438-0193, Japan
-
Nobuharu Suzuki
Electron Tube Division, Hamamatsu Photonics K.K., Iwata, Shizuoka 438-0193, Japan
-
Kazuyoshi Okano
Electron Tube Division, Hamamatsu Photonics K.K., Iwata, Shizuoka 438-0193, Japan
-
Haruyasu Kondoh
Electron Tube Division, Hamamatsu Photonics K.K., Iwata, Shizuoka 438-0193, Japan