Shape Effects on the Performance of Si and Ge Nanowire Field-Effect Transistors Based on Size Dependent Bandstructure
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概要
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In this paper, we evaulated the shape and size effects of Si and Ge nanowire (NW) field-effect transistors (FETs) on device performance using sp3d5s* tight-binding (TB) model and semi-classical top-of-barrier ballistic transport model. Our simulation results show that smaller cross-sectional area is desirable for high frequency device applications and for larger ON-state currents, square cross-section may be desirable due to larger cross-sectional area and insulator capacitance. Furthermore, it is also observed that due to quantum effects, the gate capacitance to gate oxide capacitance ($C_{\text{g}}/C_{\text{ox}}$) ratio for the small size NW FETs could be much less than one, rendering the classical assumptions and calculations invalid for nano scale FETs. In this sub-nano region, therefore, a new set of assumptions and calculations in terms of effective mass, bandgap, and one-dimensional density-of-states should be implemented as quantum effects start to play an important role in device performance.
- 2010-04-25
著者
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Samudra Ganesh
Department Of Electrical And Computer Engineering National University Of Singapore
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Ganesh Samudra
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576
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Koong Chee
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576
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Liang Gengchiau
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576
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Chee Shin
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576
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Gengchiau Liang
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576
関連論文
- Theoretical Analyses of Oxide-Bypassed Superjunction Power Metal Oxide Semiconductor Field Effect Transistor Devices
- Shape Effects on the Performance of Si and Ge Nanowire Field-Effect Transistors Based on Size Dependent Bandstructure
- A Computational Study on the Device Performance of Graphene Nanoribbon Resonant Tunneling Diodes
- Scaling Parameter Dependent Drain Induced Barrier Lowering Effect in Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor field Effect Transistor