Growth and Characterization of InGaAs Nanowires Formed on GaAs(111)B by Selective-Area Metal Organic Vapor Phase Epitaxy
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概要
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We fabricated InGaAs nanowires (NWs) in SiO2 mask openings on a GaAs(111)B substrate at growth temperatures of 600–700 °C using catalyst-free selective-area metal organic vapor phase epitaxy. At a growth temperature of 600 °C, particle-like depositions occurred, but they decreased in number and density when the growth temperature was increased to 650 °C and disappeared above 675 °C. The heights and growth rates of the NWs increased when the growth temperature was increased and the mask opening diameter was decreased from 300 to 50 nm. Photoluminescence (PL) spectra measured for the NWs indicated a blue shift in the peak from 0.95 to 1.3 eV as the growth temperature was increased from 600 to 700 °C, indicating an increase in the Ga composition from 62 to 88% in the InGaAs NWs.
- 2010-04-25
著者
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Kenji Hiruma
Research Center for Integrated Quantum Electronics, and Graduate School of Information Science and Technology, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan
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Junichi Motohisa
Research Center for Integrated Quantum Electronics, and Graduate School of Information Science and Technology, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan
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Yoshimura Masatoshi
Research Center for Integrated Quantum Electronics, and Graduate School of Information Science and Technology, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan
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Tomioka Katsuhiro
Research Center for Integrated Quantum Electronics, and Graduate School of Information Science and Technology, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan
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Hiruma Kenji
Research Center for Integrated Quantum Electronics, and Graduate School of Information Science and Technology, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan
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Shinjiro Hara
Research Center for Integrated Quantum Electronics, and Graduate School of Information Science and Technology, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan
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Takashi Fukui
Research Center for Integrated Quantum Electronics, and Graduate School of Information Science and Technology, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan
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Katsuhiro Tomioka
Research Center for Integrated Quantum Electronics, and Graduate School of Information Science and Technology, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan
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Masatoshi Yoshimura
Research Center for Integrated Quantum Electronics, and Graduate School of Information Science and Technology, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan