Effect of Post-Thermal Annealing of Thin-Film Transistors with ZnO Channel Layer Fabricated by Atomic Layer Deposition

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概要

• 論文の詳細を見る

• We investigated zinc oxide (ZnO) thin films fabricated by atomic layer deposition (ALD) for their application in thin-film transistors (TFTs). The fabricated TFTs were annealed at various temperatures in various ambient gases. The characteristics of TFTs annealed in oxygen ambient at the temperature of up to 400 °C indicated improvements with no degradation of subthreshold swing or large shift in threshold voltage. From the annealing temperature dependences of transfer characteristics and X-ray diffraction patterns, we found that the improvements in electrical characteristics are attributed to the crystalline modification of ZnO films. The TFTs annealed at 400 °C in O2 ambient indicate improved stability against the bias stress. Secondary ion mass spectrometry analysis revealed a marked decrease in the hydrogen concentration of the ZnO channel layer after the annealing at 400 °C.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-04-25

著者

• Horita Masahiro

  Graduate School Of Materials Science Nara Institute Of Science And Technology

• Uraoka Yukiharu

  CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan

• Yukiharu Uraoka

  CREST, Japan Science and Technology Agency, Honcho, Kawaguchi, Saitama 332-0012, Japan

• Kawamura Yumi

  Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan

• Yumi Kawamura

  Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan

• Masahiro Horita

  Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan

関連論文

• ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition
• Unique Phenomenon in Degradation of Amorphous In_2O_3-Ga_2O_3-ZnO Thin-Film Transistors under Dynamic Stress
• Thin-Film Devices Fabricated on Double-Layered Polycrystalline Silicon Films Formed by Green Laser Annealing (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)
• Low-Temperature-Processed Zinc Oxide Thin-Film Transistors Fabricated by Plasma-Assisted Atomic Layer Deposition (Special Issue : Solid State Devices and Materials (1))
• Size Control of ZnS Nanoparticles by Electro-Spray Deposition Method
• Effect of Post-Thermal Annealing of Thin-Film Transistors with ZnO Channel Layer Fabricated by Atomic Layer Deposition
• Fabrication of Zinc Oxide Nanopatterns by Quick Gel-Nanoimprint Process toward Optical Switching Devices

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