Temperature Dependence of the Resistance of AlGaN/GaN Heterostructures and Their Applications as Temperature Sensors

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概要

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• AlGaN/GaN heterostructures with a two-dimensional electron gas (2DEG) exhibit unique transport properties that could potentially be used for novel applications that are not related to conventional modulation-doped field effect transistor devices. Here, we describe the fabrication of high sensitivity temperature sensors exploiting temperature induced resistance changes of AlGaN/GaN-2DEG heterostructures. We observed a monotonous change in the resistance of the 2DEG from 3 to 1000 K. The temperature dependence of the resistance above 180 K fitted the Callender–Van Dusen equation. The sensitivity of the AlGaN/GaN temperature sensors was more than 2 times higher than conventional resistance temperature detectors near room temperature and 5 times higher at about 900 K. These new AlGaN/GaN temperature sensors may find niche applications in extreme environments, such as space exploration, as well as where high sensitivity is required over wide temperature ranges.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-04-25

著者

• Adarsh Sandhu

  Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan

• Abdeldjelil Habib

  Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan

• Zahmani Abdeldjelil

  Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan

• Nishijima Akira

  Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan

• Morimoto Yoshitaka

  Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan

• Heng Wang

  Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan

• Jing-Feng Li

  State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China

• Akira Nishijima

  Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan

• Yoshitaka Morimoto

  Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan

関連論文

• Temperature Dependence of the Resistance of AlGaN/GaN Heterostructures and Their Applications as Temperature Sensors

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