Crystal Growth and Luminescence Properties of Tm:BaF2 Single Crystals

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概要

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• BaF2 is an intensively studied scintillator for the detection of gamma radiation due to its relatively high stopping power, radiation hardness and extremely fast response. BaF2 possesses the fast cross-luminescence component at 195 and 220 nm with a lifetime of several hundred picoseconds. However, this component coexists with slow one at 310 nm related to the self-trapped exciton (STE). In our present study, we focused on BaF2 host material and introduced the Tm3+ (activator) 5d–4f vacuum ultraviolet (VUV) luminescence center to suppress the STE luminescence. Tm:BaF2 single crystals were successfully grown by the micro-pulling-down (μ-PD) method with up to 10 mol % of Tm. The STE emission intensity decreased with increasing Tm concentration. Tm3+ 5d–4f emission was observed while cross-luminescence was decreased at higher Tm concentrations.

• 2010-02-25

著者

• Yanagida Takayuki

  Institute Of Multidisciplinary Research For Advanced Materials Tohoku University

• Yokota Yuui

  Institute For Materials Research Tohoku University

• Martin Nikl

  Institute of Physics AS CR, v.v.i., Cukrovarnicka 10, 16253 Prague, Czech Republic

• Akira Yoshikawa

  Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Kentaro Fukuda

  Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Abe Naoto

  Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Jan Pejchal

  Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Fumiko Nara

  Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Noriaki Kawaguchi

  Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Naoto Abe

  Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

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