High Resolution Imaging of Electrical Properties of a 2-Inch-Diameter Gallium Nitride Wafer Using Frequency-Agile Terahertz Waves

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概要

• 論文の詳細を見る

• The reflective spectra of n-type gallium nitride (GaN) samples with various carrier concentrations have been measured in the terahertz region. We observed the different reflective spectra by changing the carrier concentration. The Drude Lorentz model explained well the measured spectra influenced by free carrier effects. In order to obtain electrical properties of the carrier concentration, mobility, and electrical resistivity, we used two terahertz waves generated by a frequency-agile source. Image mapping of these electrical properties on a 2-in.-diameter GaN wafer was demonstrated with a high resolution of $1\times 1$ mm2.

• 2010-02-25

著者

• Yoshiyuki Usuki

  Materials Research Laboratory, Furukawa Co., Ltd., 1-25-13 Kannondai, Tsukuba, Ibaraki 305-0856, Japan

• Hiroaki Minamide

  RIKEN Sendai, 519-1399 Aramaki, Aoba-ku, Sendai 980-0845, Japan

• Hamano Akihide

  Materials Research Laboratory, Furukawa Co., Ltd., 1-25-13 Kannondai, Tsukuba, Ibaraki 305-0856, Japan

• Ohno Seigo

  RIKEN Sendai, 519-1399 Aramaki, Aoba-ku, Sendai 980-0845, Japan

• Minamide Hiroaki

  RIKEN Sendai, 519-1399 Aramaki, Aoba-ku, Sendai 980-0845, Japan

• Hiromasa Ito

  RIKEN Sendai, 519-1399 Aramaki, Aoba-ku, Sendai 980-0845, Japan

• Seigo Ohno

  RIKEN Sendai, 519-1399 Aramaki, Aoba-ku, Sendai 980-0845, Japan

関連論文

• High Resolution Imaging of Electrical Properties of a 2-Inch-Diameter Gallium Nitride Wafer Using Frequency-Agile Terahertz Waves

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