Magnetoresistance of a Spin Metal–Oxide–Semiconductor Field-Effect Transistor with Ferromagnetic MnAs Source and Drain Contacts

スポンサーリンク

概要

• 論文の詳細を見る

• Transport characteristics were investigated in a spin metal–oxide–semiconductor field-effect transistor (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. A bottom-gate type spin MOSFET was fabricated by photolithography using an epitaxial MnAs film grown on a silicon-on-insulator (SOI) substrate. In-plane magnetoresistance showed a square like hysteretic behavior, when measurements were performed with constant source–drain and source–gate biases. From the comparison with the magnetization-related resistance change resulting from the MnAs contacts, a highly possible origin of the feature obtained for the spin MOSFET is the spin-valve effect originating from the spin-dependent transport in the Si channel.

• 2010-11-25

著者

• Harada Tomoyuki

  Deptartment of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

• Nakane Ryosho

  Deptartment of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

• Sugiura Kuniaki

  Deptartment of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

• Tanaka Masaaki

  Deptartment of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

関連論文

• Magnetoresistance of a Spin Metal–Oxide–Semiconductor Field-Effect Transistor with Ferromagnetic MnAs Source and Drain Contacts

スポンサーリンク