Effect of Plasma Conditions on the Growth of GaNAs by Plasma-Assisted Molecular-Beam Epitaxy

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概要

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• We undertake an exclusive study on the plasma-assisted molecular-beam epitaxy of GaNAs, focusing on plasma conditions. We investigate the effects of species contributing to growth and the ions produced on the resulting structural and optical characteristics of the epitaxial layer, and the effect of rapid thermal annealing on the layer. The larger the RF power, the larger the amount of both atomic N and metastable molecule N2* are produced, resulting in a monotonic increase in nitrogen incorporation. An increase in the nitrogen gas flow rate leads to the saturation of nitrogen incorporation, followed by a reduction in atomic N. Both atomic N and metastable molecule N2* contribute to the growth. The number of ions produced is larger at a larger RF power and lower nitrogen gas flow rate, but is almost negligible near the border of the plasma mode transition. The sample exposed to fewer ions during growth shows better optical properties.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-08-25

著者

• Kondow Masahiko

  Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Uchiyama Masayuki

  Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Ishikawa Fumitaro

  Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

関連論文

• Effect of Plasma Conditions on the Growth of GaNAs by Plasma-Assisted Molecular-Beam Epitaxy

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