Drain Current Stability and Controllability of Threshold Voltage and Subthreshold Current in a Multi-Mesa-Channel AlGaN/GaN High Electron Mobility Transistor
スポンサーリンク
概要
- 論文の詳細を見る
The surrounding-field effect in a multi-mesa-channel (MMC) with an AlGaN/GaN structure, in which a periodic trench structure is fabricated directly under a gate electrode, was successfully observed. This effect resulted in a shallower threshold voltage, a smaller subthreshold slope, and a higher current drivability of a high electron mobility transistor (HEMT) than those of a standard planar-type HEMT. In addition, the MMC HEMT showed a low knee voltage, even with a wide spacing between the gate and drain electrodes. Excellent current stability in the saturation region of the MMC HEMT, probably due to the effective radiation of heat from both mesa sides of the channel, was also observed. Both planar and MMC HEMTs showed similar breakdown voltages under off-state operation, indicating no significant degradation in the breakdown characteristics of AlGaN/GaN HEMTs with a periodic trench structure in the gate region.
- 2009-08-25
論文 | ランダム
- 植物成分apigeninの動物肝ミクロゾームによる代謝(自然科学編)
- Pentamethoxyflavone類のラット肝ミクロゾームによる代謝
- 卵巣嚢腫に対する腹腔鏡下手術、腟式手術、それぞれの特性について
- 乳化液状ドレッシングの品質に及ぼす牛血漿蛋白質の影響
- 収穫時期が葉ネギの呼吸速度,化学成分および鮮度保持に及ぼす影響