Electronic Transport under Potential Fluctuation in Titanium Oxide Films Prepared by RF Magnetron Sputtering Method

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概要

• 論文の詳細を見る

• Studies of AC transport of titanium oxide (TiOx) films prepared by rf magnetron sputtering have been performed, together with dc transport measurement. The fitting of the experimental data to an ac transport theory based on inhomogeneous media produces the dielectric relaxation time being defined in inhomogeneous media. Dielectric relaxation time has a thermal activation energy (0.39 eV) that is approximately the same as that (0.31 eV) of dc conductivity. The inhomogeneous nature of electronic transport can originate from long-range potential fluctuation leading to band-edge modulation and the magnitude of potential fluctuation is deduced to be 0.26 eV, which reaches about 8% of the band gap of the present TiOx films.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-07-25

著者

• Sakaguchi Koichi

  Faculty of Engineering, Aichi University of Technology, 50-2 Manori Nishihazama, Gamagori, Aichi 443-0047, Japan

• Sakaguchi Koichi

  Faculty of Engineering, Aichi University of Technology, 50-2 Manori, Nishihazama, Gamagori, Aichi 443-0047, Japan

• Hatanaka Yoshinori

  Faculty of Engineering, Aichi University of Technology, 50-2 Manori Nishihazama, Gamagori, Aichi 443-0047, Japan

• Shimakawa Koichi

  Center of Innovative Photovoltaic Systems, Gifu University, Gifu 501-1193, Japan

• Hatanaka Yoshinori

  Faculty of Engineering, Aichi University of Technology, 50-2 Manori, Nishihazama, Gamagori, Aichi 443-0047, Japan

関連論文

• Dynamic Responses of Photoconduction in TiOx Films Prepared by Radio Frequency Magnetron Sputtering
• Photoconductive Characteristics of Hydro-Oxygenated Amorphous Titanium Oxide Films Prepared by Remote Plasma-Enhanced Chemical Vapor Deposition
• Electronic Transport under Potential Fluctuation in Titanium Oxide Films Prepared by RF Magnetron Sputtering Method

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