Optical and Electrical Properties of Tin-Doped Cadmium Oxide Films Prepared by Electron Beam Technique

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概要

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• Tin-doped cadmium oxide films were deposited by electron beam evaporation technique. The structural, optical and electrical properties of the films were characterized. The X-ray diffraction (XRD) study reveals that the films are polycrystalline in nature. As composition and structure change due to the dopant ratio and annealing temperature, the carrier concentration was varied around $10^{20}$ cm-3, and the mobility increased from less than 10 to 45 cm2 V-1 s-1. A transmittance value of ${\sim}83$% and a resistivity value of $4.4 \times 10^{-4}$ $\Omega$ cm were achieved for (CdO)0.88(SnO2)0.12 film annealed at 350 °C for 15 min., whereas the maximum value of transmittance ${\sim}93$% and a resistivity value of $2.4 \times 10^{-3}$ $\Omega$ cm were obtained at 350 °C for 30 min. The films exhibited direct band-to-band transitions, which corresponded to optical band gaps of 3.1–3.3 eV.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-04-25

著者

• Mohamed H.

  Physics Department, Faculty of Science, Sohag University, Sohag 82524, Egypt

• Ali H.

  Physics Department, Faculty of Science, Sohag University, Sohag 82524, Egypt

• Wakkad M.

  Physics Department, Faculty of Science, Sohag University, Sohag 82524, Egypt

• Hasaneen M.

  Physics Department, Faculty of Science, Sohag University, Sohag 82524, Egypt

関連論文

• Optical and Electrical Properties of Tin-Doped Cadmium Oxide Films Prepared by Electron Beam Technique

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