Exciton Photoluminescence from CdTe/ZnTe Single Quantum Wells Grown by Hot Wall Epitaxy

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概要

• 論文の詳細を見る

• CdTe/ZnTe single quantum well structures were successfully grown by hot wall epitaxy. The observed photoluminescence peaks were assigned to exciton recombinations in CdTe quantum wells. Analysis of the temperature dependence of the photoluminescence peaks revealed a thermal escape of heavy holes from the quantum wells to the barrier layers in addition to the thermal dissociation of the excitons. The spectral shape and energy position of the photoluminescence peaks changed depending on the growth interruption time after the deposition of a CdTe layer. The photoluminescence peak observed for the structure fabricated with the growth interruption was attributed to the exciton recombination in CdTe quantum dots. It was suggested that the growth interruption stimulated the self-organization of CdTe quantum dots.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-11-25

著者

• Watanabe Katsuyoshi

  Graduate School of Medicine and Engineering, University of Yamanashi, Kofu 400-8511, Japan

関連論文

• Exciton Photoluminescence from CdTe/ZnTe Single Quantum Wells Grown by Hot Wall Epitaxy

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