The Effects of Gd/Nd Co-Doping on the Microstructure and Dielectric Properties of BaTiO3 Ceramics
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概要
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In order to obtain X7R ($-55$ to 125 °C, $\Delta C/C = \pm 15$% or less) ceramics sintered at a middle temperature, the effects of Gd2O3 and Nd2O3 additives on the microstructure and dielectric properties of BaTiO3 (BT)–Nb2O5–ZnO–borosilicate system were investigated. When the amount of Gd2O3 was stable, the dielectric constant at room temperature ($\varepsilon_{\text{25\,{\degC}}}$) monotonously decreased as the Nd2O3 content increased from 0.1 to 0.7 wt %. Minimal influence was observed on the high temperature coefficient of capacitance (TCC125 °C). In contrast, when the Nd2O3 content remained unchanged and Gd2O3 was increased, the dielectric constant $\varepsilon_{\text{25\,{\degC}}}$ at room temperature first declined and then increased and the TCC125 °C value decreased. Additionally, the TCC125 °C value of BT ceramics was positively correlated to the micro-stress. For Gd/Nd co-doped ceramics, TCC125 °C value was determined only by the Gd2O3 content. BT ceramics sintered at 1140 °C in air have the following properties: $\varepsilon_{\text{25\,{\degC}}}> 3000$, $\tan\delta\leq 1.0$%, $\rho\geq 10^{11}$ $\Omega$$\cdot$cm and $\Delta C/C$ ($-55$ to +125 °C) $\leq$ $\pm 7.5$%.
- 2009-11-25
著者
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Zhang ShuRen
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
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Bin Tang
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
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ShuRen Zhang
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
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XiaoHua Zhou
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China