Nanosized Poly(tetrafluoroethylene) Films as Organic Insulating Barrier for Fe/Poly(tetrafluoroethylene)/Fe Magnetic Tunnel Junction
スポンサーリンク
概要
- 論文の詳細を見る
Nanofilms of poly(tetrafluoroethylene) (PTFE; commercially coded as Teflon) shows advantage over inorganic spacer materials like Al2O3 and MgO in fabricating tunneling magneto resistive devices due to its relative dielectric constant and chemical inertness to provide a homogenous metal–organic interface. Pulsed electron deposition proves useful in fabricating such thin PTFE films (3–6 nm) for trilayer device such as Fe (100 nm)/PTFE (3–6 nm)/Fe (100 nm) on Si(100). Characteristic magnetic hysteresis loops demonstrating the magnetic tunnel junctions were realized for a PTFE organic layer thickness is less than 3 nm. The tunneling magnetoresistance measurement at room temperature shows a typical magnetoresistive feature, increasing with increasing PTFE thickness.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-10-25
著者
-
Chandra Vimlesh
Department of Chemistry and Advanced center for Materials Science, Indian Institute of Technology Kanpur, Kanpur 208 016, India
-
Manoharan S.
Department of Chemistry and Advanced center for Materials Science, Indian Institute of Technology Kanpur, Kanpur 208 016, India