Novel Ruthenium(II) Precursor for Metal–Organic Chemical Vapor Deposition

概要

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Ruthenium thin films were deposited using a new novel Ru precursor, bis(acetylacetonato)($\eta^{4}$-1,5-hexadiene)ruthenium, Ru(acac)2(hd). Ru(acac)2(hd) is a brown viscous liquid and stable in moisture and air at room temperature. The resisitivity, microstructure and surface morphology of the deposited Ru thin films were examined. The Ru thin films had a low resistivity of 12.5 μ$\Omega$$\cdot$cm at 360 °C. A very small amount of O2 gas (0.5% O2 gas concentration) is necessary as a reactant gas to decrease the resistivity of the Ru thin films. X-ray photoelectron spectroscopy (XPS) showed that the Ru thin films contained no carbon and oxygen impurities. The Ru thin film surface was fairly smooth, as measured by atomic force microscopy (AFM). The root-mean-square (RMS) roughness of the Ru thin films was 0.91 nm.
2008-08-25