Novel Resistance Switching Devices Based on Sub-10 nm Polymer Thin Film
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概要
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Resistive switching memory devices were fabricated using ultrathin (${<}10$ nm) poly(o-anthranilic acid-co-aniline) films. When the devices were biased beyond a critical value with a current compliance of 10 mA, the devices suddenly switched from a high resistive state to a low resistive state (10 mA), with a difference in injection current of more than 4 orders of magnitude. Controlling the injection current level (by controlling the current compliance) allowed the high resistive state of the device to be restored. The devices possess a prolonged retention time of $3 \times 10^{3}$ s after switching. The conduction mechanism in the OFF-state implies that the resistive switching of the device can be explained in terms of filament theory.
- 2008-07-25
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