Fabrication of Lead Zirconate Titanate Thick Films Using a Powder Containing Organic Residue

概要

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Crack-free, lead zirconate titanate (PZT) films with a thickness range of 20–100 μm were deposited on silicon substrate by aerosol deposition (AD) process using powders containing 1–12 wt % of organic species prepared by sol–gel route. The as-deposited films were annealed at 700 °C for 5 min by rapid thermal annealing (RTA) to improve the electrical properties. No delaminations or cracks were observed in the annealed film, even for a 100-μm-thick film. The organic species was evaporated during the post-annealing process and generated nano-sized pores which seemed to alleviate the residual compressive stress. Furthermore, a high deposition rate of about 3.3 μm/s was achieved on the film area of $5 \times 12$ mm2 due to the incorporation of organic residue. The dielectric constant ($\varepsilon_{\text{r}}$), remnant polarization ($P_{\text{r}}$), and piezoelectric coefficient ($d_{33}$) of the 20-μm-thick PZT film were 850, 24.0 μC/cm2, and 70 pC/N, respectively, after annealing at 700 °C for 5 min.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-07-25