Carrier Dynamics in Strain Induced Quantum Dots Modeled by Rate Equations and Gaussian Excitation Beam Distribution

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概要

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• Strain induced quantum dots are investigated by time resolved and continuous wave photoluminescence spectroscopy. Carrier dynamics is modeled with rate equations taking into account also the Gaussian intensity distribution of the excitation beam. It is shown that the Gaussian distribution has a clear effect on the saturation behaviour of the quantum dot peak intensities. The calculated intensities agree better with the measured luminescence intensities than results from the conventional rate equation approach.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-07-25

著者

• Sopanen Markku

  Depertment of Micro and Nanosciences, Micronova, Helsinki University of Technology, P.O. Box 3500, FIN-02015 HUT, Finland

• Koskenvaara Hannu

  Depertment of Micro and Nanosciences, Micronova, Helsinki University of Technology, P.O. Box 3500, FIN-02015 HUT, Finland

• Mattila Marco

  Depertment of Micro and Nanosciences, Micronova, Helsinki University of Technology, P.O. Box 3500, FIN-02015 HUT, Finland

• Lipsanen Harri

  Depertment of Micro and Nanosciences, Micronova, Helsinki University of Technology, P.O. Box 3500, FIN-02015 HUT, Finland

関連論文

• Carrier Dynamics in Strain Induced Quantum Dots Modeled by Rate Equations and Gaussian Excitation Beam Distribution

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