Distortion Measurement of Multi-Finger Transistor Using Split Higher-Order Laue Zone Lines Analysis
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概要
- 論文の詳細を見る
A distortion measurement in a region close to the interface between different materials in LSI is performed using a convergent beam electron diffraction (CBED) pattern. Split higher-order Laue zone (HOLZ) lines emerge in the CBED pattern so that a stressing region is observed close to the interface. The calculation method of the split HOLZ lines based on kinematical approximation with the sample's deformation model well reflects the experimental results. As a result of split HOLZ line analysis using the present method, it is found that there is distortion depending on the external form of a multi-finger transistor.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-05-25
著者
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TAKENO Shiro
TOSHIBA CORPORATION Research and Development Center
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Hashimoto Iwao
Department Of Industrial Chemistry Wakayama National College Of Technology
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Kuramochi Koji
Department Of Physics Tokyo University Of Science
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Yamazaki Takashi
Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T
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Uesugi Fumihiko
Toshiba Nano-analysis Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Kojima Kenji
Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Hashimoto Iwao
Department of Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8061, Japan
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Kuramochi Koji
Department of Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8061, Japan
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Takeno Shiro
Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Yamazaki Takashi
Department of Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8061, Japan
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