Advanced Multilayer Amorphous Silicon Thin-Film Transistor Structure: Film Thickness Effect on Its Electrical Performance and Contact Resistance
スポンサーリンク
概要
- 論文の詳細を見る
We report the intrinsic and extrinsic electrical characteristics of advanced multilayer amorphous silicon (a-Si:H) thin-film transistor (TFT) with dual amorphous silicon nitride (a-SiNX:H) and a-Si:H layers. The thickness effect of the high electronic quality a-Si:H film on the transistor’s electrical property was investigated; with increasing film thickness, both field-effect mobility and subthreshold swing show improvement and the threshold voltage remain unchanged. However, the contact resistance increases with the a-Si:H film thickness. Using the two-step plasma enhanced chemical vapor deposition process, we fabricated TFT’s with acceptable field-effect mobility (${\sim}1$ cm2 V-1 s-1) and threshold voltage (${<}1.5$ V) with enhanced throughput.
- 2008-05-25
論文 | ランダム
- ピリドピラゾロン誘導体の合成研究(第1報)ピリド〔3,4-c〕ピラゾロン類の合成
- 5. 4K型系R・Cアパートの住生活(その8) : 個室化について4(計画系)
- 4. 4K型系R・Cアパートの住生活-7 : 個室化について(3)(計画系)
- 4. 特殊な放射線治療の実際(癌の診断と放射線治療 : 放射線の初めから終わりまで, 関東・東京部会)
- 15 4K型系R.C.アパートの住生活 6 : 個室化について(2)(計画系)