Bond Structure in Porous SiOCH Low-$k$ Film Fabricated by Ultraviolet Irradiation
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概要
- 論文の詳細を見る
Using an advanced ultraviolet irradiation (UV curing) process, a high performance porous low-$k$ film of $k=2.57$, whose Young's modulus is larger than 8 GPa, now is developed to improve the mechanical properties of a film by the reconstruction of Si–O network structure from cage-like Si–O bonds, suboxide structures and Si–CH3 bonds. It was found that the UV curing process can efficiently strengthen the mechanical properties of porous low-$k$ film, and reduce its dielectric constant value by removing hydrocarbon bonds to form porosities. As a result, the key features of this optimal SiOCH material, high elastic modulus and a low dielectric constant, provide promising properties for future integrated schemes.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-03-25
著者
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Huang Hui
Institute Of Chemical Materials China Academy Of Engineering Physics Mianyang China
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HUNG Chen
Department of Chemical Pharmacology, Faculty of Pharmaceutical Sciences, University of Tokyo
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Wang Na
Department of Electronic Engineering, Cheng Shiu University, No. 840, Chengcing Road, Niaosong Township, Kaohsiung County 83305, Taiwan, R.O.C.
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Huang Chun
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan, Taiwan 701, R.O.C.
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Wang Yeong
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan, Taiwan 701, R.O.C.
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Houng Mau
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan, Taiwan 701, R.O.C.
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Huang Hui
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan, Taiwan 701, R.O.C.
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