Analytical Model for Epitaxial Growth of SiGe from SiH4 and GeH4 in Reduced-Pressure Chemical Vapor Deposition
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概要
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We propose a simplified reaction model for SiGe epitaxial growth by chemical vapor deposition (CVD). The SiH4 and GeH4 adsorption at vacant sites, the exchange reaction between SiH and GeH at the surface, and the decomposition of SiH and GeH are considered in the model. The decomposition of SiH4 or GeH4 into SiH2 or GeH2 is representative of complicated reactions in the gas phase. SiGe growth is carried out on a 300 mm Si substrate by reduced-pressure CVD from the SiH4–GeH4–H2 system in the original epitaxial furnace. The dependences of the growth rate and Ge content in the SiGe layer on the temperature and GeH4 flow rate are determined by the characterization of specimens cut from certain positions in 300 mm wafers. By using the chemical reaction analysis software package chemkin, the rate constants in the proposed model are determined by comparison with experimental results. In this report, we validate that the model can explain the behavior of SiGe CVD.
- 2008-12-25
著者
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Murata Daisuke
Nanofunctional Materials Laboratory, Center for Intellectual Property Strategy, Riken, Wako, Saitama 351-0198, Japan
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Imai Masato
Nanofunctional Materials Laboratory, Center for Intellectual Property Strategy, Riken, Wako, Saitama 351-0198, Japan
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Miyamura Yoshiji
Nanofunctional Materials Laboratory, Center for Intellectual Property Strategy, Riken, Wako, Saitama 351-0198, Japan
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Kanda Takahiro
Nanofunctional Materials Laboratory, Center for Intellectual Property Strategy, Riken, Wako, Saitama 351-0198, Japan