Microwave Dielectric Properties of ATe3O8 (A = Sn, Zr) Ceramics

概要

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ATe3O8 (A = Sn, Zr) ceramics were investigated as a promising dielectric materials for low temperature cofired ceramics (LTCC) applications. The ATe3O8 ceramics were synthesized using solid state reaction method by sintering in the temperature range 600 to 800 °C. The structure and microstructure of the ceramics were investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM) methods. The dielectric properties of the ceramics were studied in the frequency range 4–6 GHz. The SnTe3O8 ceramic has a dielectric constant ($\varepsilon_{\text{r}}$) of 37.3, quality factor ($Q_{\text{u}}\times f$) of 9600 GHz, and temperature coefficient of resonant frequency ($\tau_{\text{f}}$) of 223 ppm/°C, respectively. Ceramics with the composition 0.9TeO2–0.1SnTe3O8 has $\varepsilon_{\text{r}}$ of 26.7, $Q_{\text{u}}\times f$ of 10000 GHz, and a $\tau_{\text{f}}$ of 32 ppm/°C when sintered at 650 °C/2 h. ZrTe3O8 has relatively high $\varepsilon_{\text{r}}$ of 67.5, $Q_{\text{u}}\times f$ of 1800 GHz, and high positive $\tau_{\text{f}}$ of 362 ppm/°C.
2008-10-25