Investigation of Sidewall Oxidation on WSix Gates for Nano-Scale NAND Flash Memory Cells

スポンサーリンク

概要

• 論文の詳細を見る

• Extrusions on W–polycide (WSix) gate sidewalls, sheet resistance ($R_{\text{s}}$), and device characteristics as well as memory cell performance for 70 nm NAND flash memory cells are investigated. To prevent the formation of unstable W–Si–O compounds, oxidation of WSix gate sidewalls prior to oxygen plasma ashing for source/drain photo resist removal is implemented, and then WSix extrusion can be absolutely suppressed. Moreover, the sheet resistance of a WSix gate can be improved near 40% by additional sidewall oxidation due to enlarged grain size and reduction in surface roughness; thus, the program voltage of memory cells can be significantly improved more than 1 V. Simultaneously, the saturation current of n-type metal–oxide–semicondutor field effect transistor (NMOSFET) shifts less than 4%, and cell threshold voltage fluctuations resulting from floating gate coupling are not obviously changed.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-10-25

著者

• Lien Chenhsin

  Institute Of Electronics Engineering National Tsing Hua University

• Chiang Po-Jui

  Module Technology Center, Powerchip Semiconductor Corp., Hsinchu 300, Taiwan

• Ho Ching-Yuan

  Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan

• Shih Kai-Yao

  Module Technology Center, Powerchip Semiconductor Corp., Hsinchu 300, Taiwan

関連論文

• Comprehensive HSPICE Model of Phase Change Memory Cell for Static and Transient Programming
• Characteristics Improvement of Phase Change Memory with Programming Pulse Width
• An Analytical Model of Short-Channel Effect for Metal–Oxide–Semiconductor Field-Effect Transistor with Insulated Shallow Extension
• Effect of Rapid Thermal Annealing in N2 and Stacked Layer on SiO2–Al2O3–SiO2 Characteristics for Interpoly Silicon Dielectrics
• A Comprehensive Parameterized Model of Phase-Change Memory Cell for HSPICE Circuit Simulation
• Dependences of Short-Channel Effect on Doping Profiles for Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistor
• Investigation of Sidewall Oxidation on WSix Gates for Nano-Scale NAND Flash Memory Cells

スポンサーリンク