Properties of Nanocrystalline Cubic Silicon Carbide Thin Films Prepared by Hot-Wire Chemical Vapor Deposition Using SiH4/CH4/H2 at Various Substrate Temperatures

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Silicon carbide (SiC) thin films were prepared by hot-wire chemical vapor deposition from SiH4/CH4/H2 gases, and the influence of substrate temperature, $T_{\text{s}}$ ($104 < T_{\text{s}} < 434$ °C), on the properties of the SiC thin films was investigated. X-ray diffraction patterns and Raman scattering spectra revealed that nanocrystalline cubic SiC (nc-3C-SiC) films grew at $T_{\text{s}}$ above 187 °C, while completely amorphous films grew at $T_{\text{s}} = 104$ °C. Fourier transform infrared absorption spectra revealed that the crystallinity of the nc-3C-SiC was improved with increasing $T_{\text{s}}$ up to 282 °C and remained almost unchanged with a further increase in $T_{\text{s}}$ from 282 to 434 °C. The spin density was reduced monotonically with increasing $T_{\text{s}}$.
2008-01-25