Emissive Interface States in Organic Light-Emitting Diodes Based on Tris(8-hydroxyquinoline) Aluminum
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概要
- 論文の詳細を見る
We have investigated emissive interface states in fabricated indium–tin-oxide (ITO)/N,N$'$-di-1-naphthyl-N,N$'$-diphenyl-1,1$'$-biphenyl-4,4$'$diamine ($\alpha$-NPD)/tris(8-hydroxyquinoline) aluminum (Alq3)/LiF/Al organic light-emitting diodes (OLEDs) by modified deep-level optical spectroscopy (DLOS). DLOS after hole injection into the OLEDs revealed a discrete trap level located at ${\sim}1.77$ eV below the conduction band of Alq3 in the emissive interface region, in addition to the band-to-band transitions of charge carriers from $\alpha$-NPD to Alq3. This pronounced level can be activated as an efficient recombination center of the charge carriers. Also, this trap level was extensively distributed to a lower energy with increasing hole injection rate. Therefore, this level is probably attributable to intrinsic trap states at the $\alpha$-NPD/Alq3 emissive interface. Thus, DLOS has been proven to be a powerful tool for the characterization of emissive interface states in the OLEDs.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-01-25
著者
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Noda Koji
Toyota Central Research And Development Laboratories Inc.
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Morikawa Takeshi
Toyota Central R & D Laboratories Inc.
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Fujikawa Hisayoshi
Toyota Central R&d Labs. Inc.
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Nakano Yoshitaka
TOYOTA Central R&D Labs., Inc., Nagakute, Aichi 480-1192, Japan
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Nakano Yoshitaka
TOYOTA Central Research and Development Laboratories, Inc., Nagakute, Aichi 480-1192, Japan
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Morikawa Takeshi
TOYOTA Central Research and Development Laboratories, Inc., Nagakute, Aichi 480-1192, Japan
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Fujikawa Hisayoshi
TOYOTA Central R&D Laboratories, Inc., Nagakute, Aichi 480-1192, Japan
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