Film Bulk Acoustic Resonator using High-Acoustic-Impedance Electrodes
スポンサーリンク
概要
- 論文の詳細を見る
A bulk acoustic wave filter composed of piezoelectric thin-film resonators has many features superior to those of other small filters such as a surface acoustic wave (SAW) filter and a ceramic filter. A high-$Q$ factor and low loss are big advantages for a film bulk acoustic resonator (FBAR). The electrode material that is selected is very important for maintaining a high-$Q$ and appropriate coupling factor. An analysis of the effects of acoustic impedance on AlN-based FBAR performance is described. The electromechanical coupling factor ($k^{2}$) and filter loss were found to be influenced by acoustic impedance and to be mainly dominated by Young’s modulus. Ru was found by analysis and experiments to be a suitable material for the electrode. Finally, a 2 GHz wide band code division multiple access (WCDMA) filter was demonstrated to have a good performance.
- 2007-07-30
著者
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TSUTSUMI Jun
Fujitsu Laboratories Ltd.
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UEDA Masanori
FUJITSU LABORATORIES LIMITED, Peripheral System Laboratories
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Iwaki Masafumi
Fujitsu Laboratories Ltd., Akashi, Hyogo 674-8555, Japan
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NISHIHARA Tokihiro
FUJITSU LABORATORIES LIMITED, Peripheral System Laboratories
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Taniguchi Shinji
Fujitsu Laboratories Ltd., Akashi, Hyogo 674-8555, Japan
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YOKOYAMA Tsuyoshi
FUJITSU LABORATORIES LIMITED, Peripheral System Laboratories
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SATOH Yoshio
FUJITSU LABORATORIES LIMITED, Peripheral System Laboratories
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Satoh Yoshio
Fujitsu Laboratories Ltd., Storage and Intelligent Systems Laboratories, Akashi, Hyogo 674-8555, Japan
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Ueda Masanori
Fujitsu Laboratories Ltd., Storage and Intelligent Systems Laboratories, Akashi, Hyogo 674-8555, Japan
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Nishihara Tokihiro
Fujitsu Laboratories Ltd., Storage and Intelligent Systems Laboratories, Akashi, Hyogo 674-8555, Japan
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