Mechanism of Microtrench Generation in Etching of Wiring Trench on SiO2 Layer: Proposal of Simulation Model using High-Pressure Etching Gas
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概要
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In this study, we propose a simulation model to clarify the mechanism of microtrench generation in the etching process of a wiring trench on a silicon dioxide (SiO2) layer using a high-pressure etching gas. Furthermore, the validity of the simulation model is clarified by a comparison with the experimental result. The trench etching process can be expressed by a transportation model outside the trench where radicals and ions are transported from the plasma to the surface of the SiO2 layer, a transportation model inside the trench where radicals and ions are transported to the trench bottom, and a surface reaction model for the SiO2 layer where the etching behavior of fluorine reaching the trench bottom is modeled. In the transportation model outside the trench, the measurement values for the density of reactive radical species in the plasma, electron temperature, and electron density should be used. In the transportation model inside the trench, the insulation layer characteristic and the behavior of radicals and ions in the trench with the aspect ratio of the trench should be considered. The surface reaction model of the SiO2 layer can use the etching rate for the blanket of the SiO2 layer and the real ion energy should be considered. Moreover, the simulation results obtained using this model correspond well to the experimental results, and the validity of the proposed model is shown.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-06-15
著者
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Seta Shoji
Chair of Precision Engineering, Department of Mechanical Engineering, Faculty of Science and Technology, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan
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Shimizu Shinji
Chair of Precision Engineering, Department of Mechanical Engineering, Faculty of Science and Technology, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan
関連論文
- Mechanism of Microtrench Generation in Etching of Wiring Trench on SiO2 Layer
- Mechanism of Microtrench Generation in Etching of Wiring Trench on SiO2 Layer: Proposal of Simulation Model using High-Pressure Etching Gas