Self-Formation of Ti-rich Interfacial Layers in Cu(Ti) Alloy Films
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概要
- 論文の詳細を見る
To study the self-formation mechanism of Ti-rich layers in Cu(Ti) alloy films, the microstructures and electrical resistivities of the Cu(Ti) alloy films were investigated by changing the annealing atmosphere and substrate materials. Oxygen contained in Ar facilitated Ti segregation at the surface, reduced the Ti content in the alloy films, and formed relatively large grains in the alloy films, which are essential for low-resistivity Cu alloy films. For the self-formation of the Ti-rich barrier layer, it was found that the selection of a substrate that is reactive to Ti atoms (forming Ti compounds) was essential. Although a strong reaction of the Ti atoms in the alloy films with SiN compared with that with SiO2 was expected, the resistivities in the annealed Cu(Ti) alloy films on the SiN/Si substrates were higher than those on the SiO2/Si substrates. Further reduction of the resistivities is required for application of the fabrication process to devices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
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Tsukimoto Susumu
Department Of Materials Science And Engineering Kyoto University
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Murakami Masanori
Department Of Applied Chemistry Tokyo Institute Of Technology
-
Ito Kazuhiro
Department Of Cardiovascular And Thoracic Surgery Kyoto Prefectural University Of Medicine
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Tsukimoto Susumu
Department of Materials Science and Engineering, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan
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Murakami Masanori
Department of Materials Science and Engineering, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan
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- PREFACE
- Oxygen-Induced Barrier Failure in Ti-Based Self-Formed and Ta/TaN Barriers for Cu Interconnects
- Self-Formation of Ti-rich Interfacial Layers in Cu(Ti) Alloy Films
- Dependence of Electrical Properties on Work Functions of Metals Contacting to p-type ZnSe
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