A New Period-Doubled Modulation on the In/Si(111)$4 \times 1$ Surface Induced by Defects

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概要

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• We report observations of defect-induced period-doubled ($\times 2$) modulations in scanning tunneling microscopy images of the In/Si(111)$4 \times 1$ surface at room temperature. The perturbation is one-dimensional, ranging up to ten lattice constants in the row direction. The modulation is attributed to a perturbation in electronic charge density rather than to a lattice distortion. The defect-induced $\times 2$ structure differs from the low-temperature (LT) $4 \times 2$ observed for the defect-free surface. First-principle calculations found that the defects stabilize a hypothetical structure with small lattice distortions, whose calculated energy is lower than that of the large lattice-distorted structure proposed for the $4 \times 2$-LT phase. This symmetry-broken, defect-induced modulation is extraordinary in that it does not mimic the LT phase observed in the defect-free system.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-03-15

著者

• Lee D.

  Department Of Cytokine Biology The Forsyth Institute

• LEE GeunSeop

  Department of Electrical and Computer Engineering Haenyang University

• Koo Ja-Yong

  Korea Research Institute of Standards and Science, P. O. Box 102, Yuseong, Daejeon 305-600, Korea

• Yu Sang-Yong

  Department of Physics, Chungnam University, Yuseong, Daejeon 305-764, Korea

• Kim Hanchul

  Korea Research Institute of Standards and Science, P. O. Box 102, Yuseong, Daejeon 305-600, Korea

• Kim Hanchul

  Korea Research Institute of Standards and Science, P. O. Box 102, Daejeon 305-600, Korea

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