The Investigation of Ferroelectric Domain Behavior Affected by Thin Metallic Electrode

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概要

• 論文の詳細を見る

• The physical and chemical properties of metallic electrodes on Pb(Zr,Ti)O3 (PZT) are investigated by atomic force microscopy. Pt, a catalyst, tends to change itself into a dielectric oxide. Such a passive layer should cause a depolarization field driving the domain structure into the polystate. Therefore, the effective thickness of the Pt electrode becomes smaller than that of Ir electrode. Thus, we observed an opposite domain contrast around a region covered by thin Pt on PZT, which implied the failure of the screening of the depolarizing field. This multidomain configuration can cause a suppression of the remnant polarization of PZT capacitors. Also, Ir is better than Pt in regard to film smoothness, indicating that the adhesion property of Ir on PZT is superior to that of Pt on PZT. We prove it using height–height correlation function. This study is significant on the scaling issues of ferroelectric capacitors, such as the thickness limit of the electrode and the requirement for high surface smoothness of ferroelectric films.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-03-15

著者

• KOO June-Mo

  Devices Laboratory, Materials and Devices Research Center, Samsung Advanced Institute of Technology

• SHIN Sangmin

  Devices Laboratory, Materials and Devices Research Center, Samsung Advanced Institute of Technology

• PARK Youngsoo

  Devices Laboratory, Materials and Devices Research Center, Samsung Advanced Institute of Technology

• Kim Jong-Hun

  School of Physics and Nano-S1ystems Institute, Seoul National University, Seoul 151-747, Korea

• Baek J.

  School of Physics and Nano-Systems Institute, Seoul National University, Seoul 151-747, Korea

• Khim Z.

  School of Physics and Nano-Systems Institute, Seoul National University, Seoul 151-747, Korea

• Kim Suk-Pil

  Devices Laboratory, Samsung Advanced Institute of technology, Suwon 449-712, Korea

• Khim Z.

  School of Physics and Nano-S1ystems Institute, Seoul National University, Seoul 151-747, Korea

• Park Youngsoo

  Devices Laboratory, Samsung Advanced Institute of technology, Suwon 449-712, Korea

• Shin Sangmin

  Devices Laboratory, Samsung Advanced Institute of technology, Suwon 449-712, Korea

• Baek J.

  School of Physics and Nano-S1ystems Institute, Seoul National University, Seoul 151-747, Korea

• Koo June-Mo

  Devices Laboratory, Samsung Advanced Institute of technology, Suwon 449-712, Korea

関連論文

• Novel Ir-Ti Alloy Electrodes for High-Density Ferroelectric Memory Applications
• Novel Ir–Ti Alloy Electrodes for High-Density Ferroelectric Memory Applications
• Effect of Surface Morphology on Ferroelectric Domain Configuration
• The Investigation of Ferroelectric Domain Behavior Affected by Thin Metallic Electrode

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