Microfabrication of Silicon Using Self-Assembled Monolayer Resist and Metastable Helium Beam
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概要
- 論文の詳細を見る
We herein report on the microfabrication of a Si(111) surface with a negative/positive contrast by atom lithography using a neutral metastable helium atom beam (He-MAB) and a self-assembled monolayer (SAM) of octadecyltrichlorosilane (OTS). The OTS SAM bonded directly to the silicon surface as a resist and was exposed to He-MAB through a stencil mask to yield a latent image in it. Using chemical etching to develop and transfer the latent image directly onto the underlying silicon substrate, a square silicon micromesa and a microwell matrix with a nanoscale edge resolutions of approximately 100 nm on the Si(111) surface were fabricated. The negative/positive patterning mechanism was discussed in terms of the damage of the SAM resist under the irradiation of He-MAB and the possible effects of contamination.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-10-15
著者
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Kurahashi Mitsunori
National Institute for Materials Science
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Yamauchi Yasushi
National Institute for Materials Science
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SUZUKI Taku
National Institute for Materials Science
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Yamauchi Yasushi
National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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Suzuki Taku
National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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Zhang Jianwu
National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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Sun Xia
National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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Kurahashi Mitsunori
National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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