High Mobility Pentacene Thin-Film Transistors on Photopolymer Modified Dielectrics
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概要
- 論文の詳細を見る
An innovative technique for surface modification of pentacene thin-film transistors (TFTs) with mobility greater than 1.92 cm2 V-1 s-1 is reported in this paper. Photosensitive polyimide was used as a modification layer presenting a nonpolar interface on which the semiconductor, pentacene, could grow. The surface of the modification layer was exposed to a polarized ultraviolet light with a dose of 1 J to achieve a nonpolar surface on which high-performance TFTs have been fabricated. The experiment showed that the parasitic contact resistances of silver electrodes could be extracted by the gated-transfer length method, and the corrected field-effect mobility of pentacene TFTs in the linear region was as high as 2.25 cm2 V-1 s-1.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-10-15
著者
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Chou Wei-yang
Institute Of Electro-optical Science And Engineering National Cheng Kung University
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Kuo Chia-wei
Department Of Physics National Cheng Kung University
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Cheng Horng-long
Institute Of Electro-optical Science And Engineering Department Of Physics National Cheng Kung Unive
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Chen Yi-Ren
Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan
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Liao Chi-Chang
Material and Chemical Research Laboratories, Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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Kuo Chia-Wei
Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
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Yang Feng-Yu
Material and Chemical Research Laboratories, Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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Cheng Horng-Long
Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan
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Shu Dun-Yin
Material and Chemical Research Laboratories, Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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Tang Fu-Ching
Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
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Chou Wei-Yang
Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan
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